Benjamín Iñiguez received the B.S., M.S., and Ph.D. degrees in physics from the University of the Balearic Islands, Palma, Spain, in 1989, 1992, and 1996, respectively. His doctoral research focused on the development of computer-aided design models for short-channel bulk-Si and siliconon-insulator (SOI) MOSFETs. From February 1997 to September 1998, he was a Postdoctoral Research Scientist with the Department of Electrical, Computer and Systems Engineering, Rensselaer Polytechnic Institute, Troy, NY, where he studied advanced devices such as short-channel a-Si and poly-Si thin-film transistors (TFTs), GaN heterojunction field-effect transistors (HFETs), and heterodimensional MESFETs. From September 1998 to February 2001, he was a Research Scientist (Marie-Curie Grant Holder) with the Microelectronics Laboratory, Université Catholique de Louvain, Louvain, Belgium, working on the characterization and modeling of thin-film and ultrathin-film SOI MOSFETs from dc to RF conditions. In February 2001, he joined the Department of Electronic Engineering, Universitat Rovira i Virgili, Tarragona, Spain, as a Titular Professor. His current research interests are characterization and modeling of advanced electron devices, in particular, nanoscale multiplegate and single-gate SOI MOSFETs and organic and polymer TFTs, as well as the study of photonic crystals. Dr. Iñiguez was awarded the Distinction of the Catalan Government for the Promotion of University Research in 2004.

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